Realizing a stable magnetic double-well potential on an atom chip
Author(s): J. Esteve, Thorsten Schumm, B. Trebbia, I. Bouchoule, A. Aspect, C. I. Westbrook
Journal: Eur. Phys. J. D
DOI Number: 10.1140/epjd/e2005-00190-9
Link: Link to publication
We discuss design considerations and the realization of a magnetic double-well potential on an atom chip using current-carrying wires. Stability requirements for the trapping potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms.