Characterization of a Commercially Available Large Area, High Detection Efficiency Single-Photon Avalanche Diode

Author(s): M. Stipcevic, D. Wang, R. Ursin

Journal: Journal of Lightwave Technology

Volume: 31

Page(s): 3591 - 3596

Year: 2013

DOI Number: 10.1109/JLT.2013.2286422

Link: Link to publication

Abstract:

We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a significant interplay exists between dark counts, detection efficiency, afterpulsing, excess voltage and operating temperature, sometimes requiring a careful optimization tailored for a specific application. We find that a large flat plateau of sensitive area of about 0.5 mm in diameter, a peak quantum efficiency of 73% at 560 nm and timing precision down to 150 ps full-width at half-maximum are the main distinguishing characteristics of this SPAD.

Note: http://arxiv.org/abs/1311.2070

Ursin Group Ursin Group