THz quantum cascade lasers with wafer bonded active regions

Author(s): M. Brandstetter, C. Deutsch, A. Benz, G. D. Cole, H. Detz, A. M. Andrews, W. Schrenk, G. Strasser, K. Unterrainer

Journal: Optics Express

Volume: 20

Page(s): 23832-23837

Year: 2012

DOI Number: 10.1364/OE.20.023832

Link: Link to publication


We demonstrate terahertz quantum-cascade lasers with a 30 μm thick double-metal waveguide, which are fabricated by stacking two 15 μm thick active regions using a wafer bonding process. By increasing the active region thickness more optical power is generated inside the cavity, the waveguide losses are decreased and the far-field is improved due to a larger facet aperture. In this way the output power is increased by significantly more than a factor of 2 without reducing the maximum operating temperature and without increasing the threshold current.

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