Long Electronic Spin Relaxation Times of Cs Atoms in Solid 4He

Author(s): M. Arndt, S. I. Kanorsky, A. Weis, T. W. Hänsch

Journal: Physical Review Letters

Volume: 74

Page(s): 1359–1362

Year: 1995

DOI Number: 10.1103/PhysRevLett.74.1359

Link: Link to publication

Abstract:

We report on optical pumping of Cs atoms implanted in a matrix of solid 4He at 1.6 K. Longitudinal spin relaxation times Tl of 1–2 s have been measured using the “relaxation in the dark” method for magnetic holding fields in the range 0.01–1 G, for which no significant field dependence was found. Zero-field level-crossing resonances in longitudinal and transverse fields (ground-state Hanle effect) and conventional optical-rf double resonance of Cs atoms in solid 4He have been detected.

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