Creation and Charge State Dynamics of NV Centres in Diamond for Quantum Applications

15 01/2016

Friday, 15 Jan. 2016, 11:00 - 12:00

Workgroup Aspelmeyer Group

Presenter: Kathrin Buczak, Atominstitut, TU Wien
Host: M. Aspelmeyer
Where: Schrödingerroom, 4th floor, Boltzmanng. 5, 1090 Wien

In the past decades the negative nitrogen-vacancy (NV-) centre in diamond has demonstrated its versatility both as a sensor for temperature, electrical and magnetic fields, and as a promising solid-state system for quantum information processing. In this talk I will discuss the creation of NV centres using low-energy nitrogen implantation. We investigated the influence of the implanted nitrogen density on the intrinsic and extrinsic dynamics of the NV- centre, focusing especially on the NV- → NV0 decay process to study the resulting loss in coherence time, which directly affects the sensitivity of NV-based sensors. Furthermore, deterministic placement of NV centres was accomplished via masked diamond implantation and enabled the scaling towards single NV centres by fine-tuning the initial mask resist parameters and the nitrogen implantation fluence. Recent results from a fabricated diamond sample with integrated electrical and microwave structures revealed its great potential for quantum applications. Combined with the nanometer-scale accuracy of masked implantation, these methods will allow the creation of large-scale arrays of sensors and quantum devices.